Message: | Product DescriptionSilicon Wafer SpecificationType/dopantP(B)/N(P)Growth MethodFZ/CZOrientation100111Diameter4''ThicknesscustomizedResistivity0.001-10000ohm.cmTolerance±0.01mmGradePrime grade/test gradeSurfacePolishing/Lapping/GrindingParticle count@0.03um |