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GN010011P53 GaN HEMT Gallium Nitride Diode RF Microwave Optical Communication chips

Create: 08/05/2024
Expired Date:never
Category: Components [Electronic]
Message:GN010011P53 series GaN Internally Matched Power Amplifier GN010011P53 is a gallium nitride high electron mobility transistor (GaN HEMT),a high power internally matched power tube,which can work in pulse mode at saturated power,used in standard communication and radar frequency bands,and provides the best power and gain performance in 50Ω system. Covering the working frequency band:0.99 ~1.13GHz Good 50Ω impedance matching,easy to cascade Metal ceramic tube sealed package Screw-fixed flange package or welded pill package
City:shenzhen[CN] 
Location:
 
Aug 05 2024GN010011P53 GaN HEMT Gallium Nitride Diode RF Microwave Optical Communication chips37

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